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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION ISR820 THRU ISR860 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability High surge capabitity High reliability ITO-220A .185(4.7) .169(4.3) .134(3.4) .110(2.8) MECHANICAL DATA * * * * * Case: ITo-220A molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 2.24 grams .114(2.9) .098(2.5) .406(10.3) .382(9.7) .138(3.5) .122(3.1) .04MAX. (1.0) .071(1.8) .055(1.4) .055(1.4) .039(1.0) .035(0.9) .020(0.5) .108(2.75) .091(2.30) .602(15.3) .579(14.7) .154 (3.9) .138 (3.5) .531(13.5) .492(12.5) .114(2.9) .098(2.5) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .031(0.8) .016 (0.4) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at Derating Case Temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 1) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM RJC CJ TJ TSTG 700 -55 to + 150 -55 to + 150 ISR820 ISR830 ISR835 ISR840 ISR845 20 14 20 30 21 30 35 25 35 40 28 40 8.0 150 2.5 450 45 32 45 ISR850 ISR860 UNITS 50 35 50 60 42 60 Volts Volts Volts Amps Amps 0 C/ W pF 0 0 C C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 8.0A DC Maximum Average Reverse Current at Rated DC Blocking Voltage @TC = 25 o C @TC = 100 o C SYMBOL VF IR ISR820 ISR830 ISR835 ISR840 ISR845 .65 5.0 50 ISR850 ISR860 UNITS .75 Volts mAmps mAmps 2002-11 NOTES : 1. Thermal Resistance Junction to Case. 2. Suffix "R" for Reverse Polarity. 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts. RATING AND CHARACTERISTIC CURVES ( ISR820 THRU ISR860 ) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE 10 8 ISR AVERAGE FORWARD CURRENT, (A) FIG. 2 - TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT, (mA) TC = 150 6 R IS 82 ~IS 850 1.0 TC = 125 4 2 0 0 Single Phase Half Wave 60Hz Inductive or Resistive Load R8 0~ R IS 84 5 60 TC = 75 .1 TC = 25 50 100 CASE TEMPERATURE, ( 150 ) PEAK FORWARD SURGE CURRENT, (A) FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 155 8.3ms Single Half Sine-Wave (JEDED Method) 150 145 140 135 130 125 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .001 0 20 40 60 80 ISR820~ISR845 ISR850~ISR860 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 4 - TYPICAL JUNCTION CAPACITANCE 4000 JUNCTION CAPACITANCE, (pF) INSTANTANEOUS FORWARD CURRENT, (A) FIG. 5 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 2000 ISR820~ISR845 ISR820~ISR845 10 1000 800 600 400 ISR850~ISR860 ISR850~ISR860 1.0 200 100 .1 0.1 .1 TJ = 25 Pulse Width=300uS 1% Duty Cycle .4 1.0 4 10 REVERSE VOLTAGE, ( V ) 40 80 100 .2 .3 .4 .5 .6 .7 .8 .9 1.0 INSTANTANEOUS FORWARD VOLTAGE, (V) RECTRON |
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